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Polarization and Breakdown Analysis of AlGaN Channel HEMTs with AlN Buffer
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India
SKP Engineering College, Tiruvannamalai, India
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India
- 1 Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India
- 2 SKP Engineering College, Tiruvannamalai, India
- 3 Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India
World Journal of Condensed Matter Physics·Volume 05 (2015)·Pages 232–243·Published 27 July 2015·DOI10.4236/wjcmp.2015.53024
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Abstract
We have demonstrated the first carrier density model for AlGaN channel with AlN buffer using spontaneous and piezoelectric polarization comparison with experimental and theoretical results. From the results we proved that the formation of 2DEG in undoped structure relied both on spontaneous and piezoelectric polarization. The electron distribution of Al concentration (0 < x < 0.5) was measured for both AlGaN channel and barrier. Barrier thickness assumed between 20 and 25 nm for validating the experimental results. The carrier concentration was observed at the specific interface of the N- and Ga-face by assuming x1, x2 = 0. The model results are verified with previously reported experimental data.
KeywordsAlGaN ChannelSheet Carrier Concentration ModelN- and Ga-facePolarizationHigh BreakdownTotal Induced Net Interface Polarization
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