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Temperature Effect on Capacitance of a Silicon Solar Cell under Constant White Biased Light
Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
Electromechanical Engineering Department, Polytechnic School of Thies University, Thies, Senegal
Electromechanical Engineering Department, Polytechnic School of Thies University, Thies, Senegal
Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
University of Alioune DIOP, Bambey, Senegal
Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
- 1 Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
- 2 Electromechanical Engineering Department, Polytechnic School of Thies University, Thies, Senegal
- 3 Electromechanical Engineering Department, Polytechnic School of Thies University, Thies, Senegal
- 4 Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
- 5 University of Alioune DIOP, Bambey, Senegal
- 6 Physics Department, Faculty of Sciences and Techniques, University of Cheikh Anta Diop, Dakar, Senegal
World Journal of Condensed Matter Physics·Volume 06 (2016)·Pages 261–268·Published 25 July 2016·DOI10.4236/wjcmp.2016.63024
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Abstract
In static regime with polychromatic illumination, using the expression of the solar cell capacitance to determine the silicon solar cell capacitance C 0 (T) in short-circuit, is the purpose of this article. The expression of the excess minority carries density δ(x) from the continuity equation. The expression of δ(x) is used to determine the photovoltage expression. The capacitance efficiency dependence on X cc (T) is studied. X cc (T) is the abscissa of the maximum of δ(x).
KeywordsSolar CellCapacitanceTemperature
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