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Nanometer Thick Diffused Hafnium and Titanium Oxide Light Sensing Film Structures
Department of Physics, Queens College of CUNY, Flushing, NY, USA
Graduate Center of CUNY, New York, NY, USA
- 1 Department of Physics, Queens College of CUNY, Flushing, NY, USA
- 2 Graduate Center of CUNY, New York, NY, USA
World Journal of Condensed Matter Physics·Volume 07 (2016)·Pages 36–45·Published 29 December 2016·DOI10.4236/wjcmp.2017.71004
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Abstract
We examine 10 nm thick film structures containing either Hf or Ti sandwiched between two respective oxide layers. The layers are deposited onto heated substrates to create a diffusion region. We observe a high degree of light sensitivity of the electric current through the film thickness for one polarity of an applied voltage. For the other polarity, the current is not affected by the light. We explain the observed phenomenology using the single-particle model based on the existence of interface states on the metal-oxide interfaces.
KeywordsThin FilmLight SensingCurrent EnhancementInterface StatesHafniumTitanium
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