X-Ray Photoelectron Spectroscopy and Raman Spectroscopy Studies on Thin Carbon Nitride Films Deposited by Reactive RF Magnetron Sputtering

Abstract

Thin carbon nitride (CN x ) films were synthesized on silicon substrates by reactive RF magnetron sputtering of a graphite target in mixed N 2 /Ar discharges and the N 2 gas fraction in the discharge gas, F N , varied from 0.5 to 1.0. The atomic bonding configuration and chemical composition in the CN x films were examined using X-ray photoelectron spectroscopy (XPS) and the degree of structural disorder was studied using Raman spectroscopy. An increase in the nitrogen content in the film from 19 to 26 at% was observed at F N = 0.8 and found to influence the film properties; normality tests suggested that the data obtained at F N = 0.8 are not experimental errors. The interpretation of XPS spectra might not be always straightforward and hence the detailed and quantitative comparison of the XPS data with the information acquired by Raman spectroscopy enabled us to interpret the decomposed peaks in the N 1s and C 1s XPS spectra. Two N 1s XPS peaks at 398.3 and 399.8 eV (peaks N 1 and N 2 , respectively) were assigned to a sum of pyridine-like nitrogen and -C≡N bond, and to a sum of pyrrole-like nitrogen and threefold nitrogen, respectively. Further, the peaks N 1 and N 2 were found to correlate with C 1s XPS peaks at 288.2 and 286.3 eV, respectively; the peak at 288.2 eV might include a contribution of sp 3 carbon.