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Study of Two One-Dimensional Multi Tunnel Junctions Arrays Structures by SIMON
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
- 1 Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
- 2 Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
- 3 Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
- 4 Laboratory of Microelectronics and Instrumentation, Faculty of Sciences of Monastir, University of Monastir, Monastir, Tunisia
World Journal of Nano Science and Engineering·Volume 02 (2012)·Pages 176–180·Published 11 December 2012·DOI10.4236/wjnse.2012.24023
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Abstract
Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory (SEM). In this paper, we investigate a nano-device structure using a two one dimensional array MTJs connected to the basic Single Electron Circuits, in order to analyze the impact of physical parameters on the performances and application of this structure. The device generates can operate at room temperature. The simulation of single-electron circuit demonstrates with Monte Carlo simulator, SIMON.
KeywordsMulti Tunnel Junctions (MTJs)Coulomb Blockade EffectEffective CapacitancesSIMON Simulator
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