Effect of Temperature on I-V Characteristic for ZnO/CuO
- 1 Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum, Sudan
- 2 Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum, Sudan
- 3 Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum, Sudan
- 4 Department of Physics, Faculty of Science and Technology, Omdurman Islamic University, Omdurman, Sudan
- 5 Department of Physics, Faculty of Science and Technology, Omdurman Islamic University, Omdurman, Sudan
- 6 Department of Physics, Faculty of Science and Technology, Omdurman Islamic University, Omdurman, Sudan
- 7 Department of Physics, College of Science, Sudan University of Science and Technology, Khartoum, Sudan
- 8 Department of Laser Physics, Faculty of Science, Meteorology Alneleen University, Khartoum, Sudan
Abstract
Research on nonmaterials has become increasingly popular because of their unique physical, chemical, optical and catalytic properties compared to their bulk counterparts. Therefore, many efforts have been made to synthesize multidimensional nanostructures for new and efficient nanodevices. Among those materials, zinc oxide (ZnO) has gained substantial attention owing to many outstanding properties. ZnO besides its wide band gap of 3.34 eV exhibits a relatively large excitons binding energy (60 meV) at room temperature which is attractive for optoelectronic applications. Likewise, cupric oxide (CuO) has a narrow band gap of 1.2 eV and a variety of chemo-physical properties that are attractive in many fields. Moreover, composite nanostructures of these two oxides (CuO/ZnO) may pave the way for various new applications. So in this thesis, eight samples of CuO/ZnO junction were synthesized and exposed to temperatures 60, 70, 80, 90, 100, 110, 120 and 130. The electrical properties of Schottky diode junctions were analyzed by I-V measurements under the influence of direct solar radiation and, lag of radiation (darkness) which shows the semi-logarithmic I-V characteristic curve of the fabricated photodiodes. Also energy band gap was estimated and the morphology and particle sizes of the as-prepared sample were determined by SEM. The SEM images of ZnO + CuO sample films were annealed at 60 ° C to 130 ° C step 10.
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